# US 2013/0153536 A1 · Combinatorial processing using a remote plasma source

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0153536 A1
- Document ID: US20130153536A1
- Status: Published application
- Kind: A1
- Application number: 13/328,129
- Filed: 2011-12-16
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: Intermolecular, Inc.
- Inventors: ShouQian Shao; Kent Riley Child; Danny Wang
- Web page: https://patentgrep.com/patent/US20130153536A1

## CPC

- C23C 16/042: {using masks}
- C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- H05H 1/54: Plasma accelerators
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS

## Abstract

Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.

## Claims

### Claim 1

An apparatus for remote plasma exposure of a substrate comprising
a first chamber;
a remote plasma source;
a second chamber enclosing a substrate support, wherein the second chamber comprises a top surface parallel to the surface of the substrate support, a bottom surface parallel to the top surface and disposed below the substrate support, and one or more side walls;
an aperture disposed in the top surface of the second chamber and operable to provide site-isolated exposure of plasma from the remote plasma source to a site-isolated region on a substrate, wherein the aperture is disposed between the remote plasma source and the substrate and has an area less than that of the substrate; and
a transport system comprising the substrate support and capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate;
wherein the remote plasma source, second chamber and the transport system are disposed within the first chamber.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein plasma exposure process parameters can be varied in a combinatorial manner.

### Claim 3 (depends on 2)

The apparatus of claim 2, wherein the plasma exposure process parameters comprise at least one of source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.

### Claim 4 (depends on 1)

The apparatus of claim 1, further comprising a barrier positioned near the edges of the aperture, extending down from the top surface of the second chamber toward the substrate, and separated from the substrate by a gap, wherein the gap is less than about 0.5 mm.

### Claim 5 (depends on 4)

The apparatus of claim 4, wherein the barrier defines the boundaries of the site isolated region on the substrate.

### Claim 6 (depends on 1)

The apparatus of claim 1, further comprising a substrate heater mounted in the substrate support.

### Claim 7 (depends on 1)

The apparatus of claim 1, further comprising a gas purge system comprising a plurality of flow outlets at the edge of the substrate support.

### Claim 8 (depends on 7)

The apparatus of claim 7, wherein the gas purge system provides a gas flow into the site-isolated region through the small gap and out of the site-isolated region through the aperture.

### Claim 9 (depends on 1)

The apparatus of claim 1, further comprising a shutter disposed between the remote plasma source and the aperture.

### Claim 10

A method of surface exposure to a plasma or reactive radical species comprising
exposing a first site-isolated region of a surface of a substrate to a plasma or reactive radical species from a remote plasma source under a first set of process parameters;
exposing a second site-isolated region of the surface of the substrate to a plasma or reactive radical species from a remote plasma source under a second set of process parameters; and
varying the first set and second set of process parameters in a combinatorial manner.

### Claim 11 (depends on 10)

The method of claim 10, wherein the first set and second set of process parameters comprise at least one of source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.

### Claim 12 (depends on 10)

The method of claim 10, wherein the exposing is controlled by an aperture in a plate disposed between the remote plasma source and the substrate and wherein the aperture has an area less than that of the substrate.

### Claim 13 (depends on 10)

The method of claim 10, wherein the exposing is further controlled by placing a barrier near the edges of the aperture, wherein the barrier extends from the aperture plate to the substrate surface and is separated by a gap from the substrate surface.

### Claim 14 (depends on 10)

The method of claim 10, wherein the exposing is further controlled by a gas purge system that provides a flow of gas into the site-isolated region through the gap and out of the site-isolated region through the aperture.

### Claim 15 (depends on 10)

The method of claim 10, further comprising exposing a third site-isolated region of the substrate to a plasma or reactive radical species from a remote plasma source under a third set of process parameters.

### Claim 16 (depends on 10)

The method of claim 10, further comprising exposing a plurality of site-isolated regions of the substrate to a plasma or reactive radical species from a remote plasma source under a plurality of different sets of process parameters.

### Claim 17 (depends on 10)

The method of claim 10, wherein the substrate is analyzed to evaluate the effect of the different process parameters on the substrate.

### Claim 18 (depends on 10)

The method of claim 10, wherein a transport system comprising the substrate support is capable of positioning the substrate such that a site-isolated region can be located anywhere on the substrate.