# US 2013/0153535 A1 · Resin composition, resist underlayer film, resist underlayer film-forming method and pattern-forming method

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- Number: US 2013/0153535 A1
- Document ID: US20130153535A1
- Status: Published application
- Kind: A1
- Application number: 13/714,406
- Filed: 2012-12-14
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: Jsr Corporation
- Inventors: Shin-ya NAKAFUJI; Satoru MURAKAMI; Kazuhiko KOUMURA; Yuushi MATSUMURA; Masayuki MOTONARI; Katsuhisa MIZOGUCHI
- Web page: https://patentgrep.com/patent/US20130153535A1

## CPC

- G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)}
- G03F 7/091: {characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement}
- H10P 76/2043: {using an anti-reflective coating}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A resin composition for forming a resist underlayer film includes a resin that includes an aromatic ring, and a crosslinking agent having a partial structure represented by a following formula (i). X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—. R1 represents a hydrogen atom or a C1-30 monovalent hydrocarbon group. R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a C1-30 monovalent hydrocarbon group, a C1-30 monovalent oxyhydrocarbon group or a C1-30 monovalent sulfanilhydrocarbon group. p is an integer of 1 to 3.

## Claims

### Claim 1

A resin composition for forming a resist underlayer film, comprising:
a resin that includes an aromatic ring; and
a crosslinking agent having a partial structure represented by a following formula (i):
wherein, in the formula (i),
X represents an oxygen atom, a sulfur atom, *—COO— or —NRA—, wherein RA represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms, and * denotes a site bonded to R1;
R2 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms;
R2 represents a hydroxy group, a sulfanil group, a cyano group, a nitro group, a monovalent hydrocarbon group having 1 to 30 carbon atoms, a monovalent oxyhydrocarbon group having 1 to 30 carbon atoms or a monovalent sulfanilhydrocarbon group having 1 to 30 carbon atoms;
n1 is an integer of 1 to 12;
n2 is an integer of 0 to 11, wherein a sum of n1 and n2 is an integer of no greater than 12, and in a case in which at least one of X, R1 and R2 is present in plural number, each of the plural Xs, the plural R1s and the plural R2s are a same or different; and
p is an integer of 1 to 3.

### Claim 2 (depends on 1)

The resin composition according to claim 1, wherein the crosslinking agent is a compound represented by a following formula (b1), a compound represented by a following formula (b2), or a both thereof:
wherein, in the formula (b1),
X, R1 and R2 are each as defined in the above formula (i);
R3 represents a single bond, a substituted or unsubstituted bivalent hydrocarbon group having 1 to 30 carbon atoms, —CO—, —COO—, —COO—, —O—, —CS—, —S—, —SO—, —SO2—, —NRB—, or a bivalent group obtained by a combination thereof, wherein RB represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms;
R4 represents, in a case in which n7 is 1, a single bond, a substituted or unsubstituted bivalent hydrocarbon group having 1 to 30 carbon atoms, —CO—, —COO—, —COO—, —O—, —CS—, —S—, —SO—, —SO2—, —NRC—, or a bivalent group obtained by a combination thereof, and in a case in which n7 is 2 or greater, R4 represents a substituted or unsubstituted hydrocarbon group having a valency of (n7+1) and having 1 to 30 carbon atoms, or a group having a valency of (n7+1) obtained by combining a substituted or unsubstituted hydrocarbon group having 1 to 30 carbon atoms with —CO—, —COO—, —COO—, —O—, —CS—, —S—, —SO—, —SO2—, —NRC—, or a combination thereof, wherein Rc represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 30 carbon atoms;
n3 is an integer of 1 to 11;
n4 is an integer of 0 to 11, wherein a sum of n3 and n4 is an integer of no greater than 11;
n5 is an integer of 1 to 11;
n6 is an integer of 0 to 11, wherein a sum of n5 and n6 is an integer of no greater than 11;
is n7 is an integer of 1 to 9, and in a case in which n7 is no less than 2, the plural R3s are a same or different;
q is an integer of 1 to 3; and
r is an integer of 1 to 3; and
wherein, in the formula (b2),
X, R1 and R2 are each as defined in the above formula (i);
n8 is an integer of 1 to 12;
n9 is an integer of 0 to 11, wherein a sum of n8 and n9 is an integer of no greater than 12; and
s is an integer of 1 to 3.

### Claim 3 (depends on 1)

The resin composition according to claim 1, wherein the resin is a novolak resin, a resol resin, an acenaphthylene resin, a styrene resin, a polyarylene resin, or a combination thereof.

### Claim 4 (depends on 1)

The resin composition according to claim 1, further comprising a solvent.

### Claim 5 (depends on 1)

A resist underlayer film formed from the resin composition according to claim 1.

### Claim 6 (depends on 1)

A resist underlayer film-forming method comprising:
providing a coating film using the resin composition according to claim 1; and
heating the coating film.

### Claim 7 (depends on 1)

A pattern-forming method comprising:
providing a resist underlayer film on an upper face side of a substrate using the resin composition according to claim 1;
providing a resist film on an upper face side of the resist underlayer film using a resist composition;
exposing the resist film;
developing the exposed resist film to form a resist pattern; and
sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.