# US 2013/0153533 A1 · Method for tuning wavelength of optical device using refractive index quasi-phase change and etching

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0153533 A1
- Document ID: US20130153533A1
- Status: Published application
- Kind: A1
- Application number: 13/612,467
- Filed: 2012-09-12
- Published: 2013-06-20
- Earliest claimed: 2011-12-16
- Assignees: Electronics and Telecommunications Research Institute
- Inventors: Sahnggi PARK; Gyungock KIM
- Web page: https://patentgrep.com/patent/US20130153533A1

## CPC

- G02B 6/122: Basic optical elements, e.g. light-guiding paths
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS

## Abstract

Methods for tuning a wavelength of an optical device are provided. According to the method, a core pattern may be formed on a substrate, a dielectric layer may be formed to cover the core pattern, and the dielectric layer may be thermally treated to increase a refractive index of the dielectric layer. The dielectric layer may include a silicon oxynitride layer.

## Claims

### Claim 1

A method for tuning a wavelength of an optical device, comprising:
forming an optical device including a core pattern on a substrate and a dielectric layer covering the core pattern; and
thermally treating the optical device to increase a refractive index of the dielectric layer,
wherein the dielectric layer includes a silicon oxynitride (SiON) layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the optical device is thermally treated at a deposition temperature or more of the dielectric layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein thermally treating the optical device to increase a refractive index of the dielectric layer comprises:
thermally treating the dielectric layer to partially phase-change oxygen or nitrogen in the dielectric layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein thermally treating the optical device to increase a refractive index of the dielectric layer comprises:
partially and thermally treating the optical device to increase a refractive index of a specific region of the dielectric layer.

### Claim 5 (depends on 1)

The method of claim 1, wherein the core pattern includes at least one of a silicon (Si) layer, a silicon nitride (Si3N4) layer, a tantalum oxide (Ta2O5) layer, a hafnium oxide (HfO2) layer, and a doped silicon oxide (doped SiO2) layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein forming the optical device comprises:
forming the dielectric layer covering a top surface of the core pattern or the top surface and a sidewall of the core pattern by a deposition process.

### Claim 7 (depends on 1)

The method of claim 1, wherein forming the optical device further comprises:
forming a lower cladding layer between the substrate and the core pattern,
wherein the lower cladding layer includes a silicon oxide (SiO2) layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein forming the optical device further comprises:
forming an upper cladding layer covering the dielectric layer,
wherein the upper cladding layer includes a silicon oxide (SiO2) layer and/or a polymer layer.

### Claim 9

A method for tuning a wavelength of an optical device, comprising:
forming an optical device including a core pattern on a substrate, a dielectric layer covering the core pattern, and a cladding layer covering the dielectric layer; and
etching the cladding layer to reduce a refractive index of the cladding layer.

### Claim 10 (depends on 9)

The method of claim 9, wherein etching the cladding layer to reduce the refractive index of the cladding layer comprises:
etching the cladding layer until the dielectric layer is exposed.

### Claim 11 (depends on 10)

The method of claim 10, further comprising:
etching a portion of the dielectric layer to reduce a refractive index of the dielectric layer.

### Claim 12 (depends on 9)

The method of claim 9, wherein the core pattern includes at least one of a silicon (Si) layer, a silicon nitride (Si3N4) layer, a tantalum oxide (Ta2O5) layer, a hafnium oxide (HfO2) layer, and a doped silicon oxide (doped SiO2) layer.

### Claim 13 (depends on 9)

The method of claim 9, wherein the dielectric layer includes a silicon oxynitride (SiON) layer.

### Claim 14 (depends on 9)

The method of claim 9, wherein the cladding layer includes a silicon oxide (SiO2) layer and/or a polymer layer.

### Claim 15 (depends on 9)

The method of claim 9, wherein forming the optical device comprises:
forming the dielectric layer covering a top surface of the core pattern or the top surface and a sidewall of the core pattern by a deposition process.

### Claim 16 (depends on 9)

The method of claim 9, wherein forming the optical device further comprises:
forming a lower cladding layer between the substrate and the core pattern,
wherein the lower cladding layer includes a silicon oxide (SiO2) layer.