# US 2013/0153414 A1 · Indium Target And Method For Manufacturing Same

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- Number: US 2013/0153414 A1
- Document ID: US20130153414A1
- Status: Published application
- Kind: A1
- Application number: 13/704,086
- Filed: 2011-05-20
- Published: 2013-06-20
- Earliest claimed: 2010-09-01
- Assignees: JX Nippon Mining & Metals Corporation
- Inventors: Yousuke Endo; Takamasa Maekawa
- Web page: https://patentgrep.com/patent/US20130153414A1

## CPC

- H01J 37/3426: {Material}
- C22F 1/16: of other metals or alloys based thereon
- C23C 14/14: Metallic material, boron or silicon
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C22F: CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS (surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by this subclass, C23F17/00)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm3 or less.

## Claims

### Claim 1

An indium target wherein:
an overall average grain size is 10 mm or less;
for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and
pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm3 or less.

### Claim 2 (depends on 1)

The indium target according to claim 1, wherein the maximum grain size is 20 mm or less.

### Claim 3

A method for manufacturing an indium target, the method comprising melting and casting an indium raw material, wherein ultrasonic vibration is applied at least at the time of solidification of the indium raw material.

### Claim 4 (depends on 3)

The method for manufacturing an indium target according to claim 3, wherein cooling is carried out at the time of melting and casting at a cooling rate of 3° C./min to 70° C./min.