# US 2013/0153033 A1 · Ink for producing compound semiconductor thin film, compound semiconductor thin film produced using the ink, solar cell having compound semiconductor the thin film, and process for producing solar cell

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- Number: US 2013/0153033 A1
- Document ID: US20130153033A1
- Status: Published application
- Kind: A1
- Application number: 13/768,018
- Filed: 2013-02-15
- Published: 2013-06-20
- Earliest claimed: 2010-08-17
- Assignees: Toppan Printing Co., Ltd.
- Inventors: Yiwen Zhang; Akira Yamada
- Web page: https://patentgrep.com/patent/US20130153033A1

## CPC

- H10F 77/121: comprising only selenium or only tellurium
- H10F 77/12: Active materials
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- H10P 14/265: {using solutions}
- H10P 14/3436: {being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds}
- H10P 14/3461: {Nanoparticles}
- H01B 1/02: mainly consisting of metals or alloys
- Y02E 10/541: CuInSe2 material PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

An ink for forming a compound semiconductor thin film is provided, which contains a binder includes a compound includes an S atom or an Se atom and metallic compound particles which are both dispersed in an organic solvent. A compound semiconductor thin film is formed by applying or printing the ink for forming a compound semiconductor thin film and heat-treating it. A solar cell is constituted, which has a light-absorbing layer formed of the compound semiconductor thin film.

## Claims

### Claim 1

An ink for forming a compound semiconductor thin film comprising:
a binder comprising a compound comprising an S atom or an Se atom and metallic compound particles which are both dispersed in an organic solvent.

### Claim 2 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the compound comprising an S atom or an Se atom is represented by the following chemical formula;
wherein X represents an S atom or an Se atom, and R1, R2, R3, and R4 independently represent a hydrogen atom or an alkyl group or an aryl group having 1 to 10 carbon atoms.

### Claim 3 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein an average particle diameter of the metallic compound particles is from 1 to 200 nm.

### Claim 4 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the metallic compound particles comprises at least one VIB group element.

### Claim 5 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the metallic compound particles are one selected from the group consisting of CuInxGa1−xSe2 (0≦x≦1) particles, AgInxGa1−xSe2 (0≦x≦1) particles, CuInxGa1−x(SeyS1−y)2 (0≦x≦1, 0≦y≦1) particles, Cu2ZnSn(SxSe1−x)4 (0≦x≦1) particles, and CuAl(SexS1−x)2 (0≦x≦1) particles.

### Claim 6 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the metallic compound particles are one selected from the group consisting of Cu2−xSe1−ySy (0≦x≦1, 0≦y≦1) particles, (InxGa1−x)2(Se1−ySy)3 (0≦x≦1, 0≦y≦1) particles, and InxGa1−xSe1−ySy (0≦x≦1, 0≦y≦1) particles.

### Claim 7 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the metallic compound particles are a mixture of Cu2−xSe (0≦x≦1) particles and In2(SexS1−x)3 (0≦x≦1) particles.

### Claim 8 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the metallic compound particles are one selected from the group consisting of Cu2−xSn2−y(Se1−zSz)2 (0≦x≦2, 0≦y≦2, 0≦z≦1) particles and Cu2−xZn2−y(Se1−zSz)2 (0≦x≦2, 0≦y≦2, 0≦z≦1) particles.

### Claim 9 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the metallic compound particles are one selected from the group consisting of Cu2−xSe1−ySy (0≦x≦1, 0≦y≦1) particles, Zn2−xSe1−ySy (0≦x≦1, 0≦y≦1) particles, and Sn2−xSe1−ySy (0≦x≦1, 0≦y≦1) particles.

### Claim 10 (depends on 1)

The ink for forming a compound semiconductor thin film according to claim 1, wherein the S/(S+Se) molar ratio of a mixture of the binder comprising a compound comprising an S atom or an Se atom and the metallic compound particles is from 0.05 to 0.9.

### Claim 11 (depends on 1)

A compound semiconductor thin film, which is formed by applying or printing the ink for forming a compound semiconductor thin film according to claim 1 and heat-treating it.

### Claim 12 (depends on 11)

A solar cell comprising a light-absorbing layer formed of the compound semiconductor thin film according to claim 11.

### Claim 13 (depends on 1)

A process for producing a solar cell comprising:
forming a compound semiconductor coating film by applying or printing the ink for forming a compound semiconductor thin film according to claim 1 an electrode formed on a substrate; and
forming a light-absorbing layer formed of the compound semiconductor thin film by heat-treating the compound semiconductor coating film.