# US 2013/0153026 A1 · Substrate for solar cell, and solar cell

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2013/0153026 A1
- Document ID: US20130153026A1
- Status: Published application
- Kind: A1
- Application number: 13/819,256
- Filed: 2011-08-16
- Published: 2013-06-20
- Earliest claimed: 2010-08-26
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Inventors: Hideo Ooiwa; Takenori Watabe; Hiroyuki Otsuka; Kazuo Hara
- Web page: https://patentgrep.com/patent/US20130153026A1

## CPC

- H10F 10/13: Photovoltaic cells having absorbing layers comprising graded bandgaps
- H10D 62/117: {Shapes of semiconductor bodies}
- H10D 62/405: {Orientations of crystalline planes}
- H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers
- H10F 71/1221: {comprising polycrystalline silicon}
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/147: {Shapes of bodies}
- H10F 77/215: {Geometries of grid contacts}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- Y02E 10/546: Polycrystalline silicon PV cells
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Provided is a substrate for a solar cell, wherein a flat chamfered portion is formed on one corner of a silicon substrate having a square shape in a planar view, or a notch is formed on the corner or close to the corner. This invention makes it possible to easily check the position of the substrate and determine the direction of the substrate in a solar cell manufacturing step, and suppresses failures generated due to the direction of the substrate.

## Claims

### Claim 1

A solar cell-forming silicon substrate of square shape with corners as viewed in plan view, which is provided with a chamfer at one corner or a notch at or near one corner.

### Claim 2

A solar cell-forming silicon substrate of square shape as viewed in plan view, having a first corner and a second corner not diagonal to the first corner, which is provided with a chamfer at the first corner or a notch at or near the first corner and with a notch at or near the second corner or a chamfer at the second corner, the notch or chamfer at the second corner is selected to be different from the chamfer or notch at the first corner.

### Claim 3

A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view, which is provided with an orientation flat at one corner or a notch at or near one corner.

### Claim 4

A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view, having a surface in (100) plane, which substrate is provided with an orientation flat or notch in a crystal orientation <110> passing substantially the center of the substrate.

### Claim 5

A solar cell-forming monocrystalline silicon substrate of square shape with rounded corners as viewed in plan view, which is provided with an orientation flat at one corner and a notch at or near another corner not diagonal to the one corner.

### Claim 6 (depends on 1)

A solar cell comprising the substrate of claim 1, wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate, and a high-concentration diffusion layer is formed where a finger electrode is to be formed.

### Claim 7 (depends on 2)

A solar cell comprising the substrate of claim 2, wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate, and a high-concentration diffusion layer is formed where a finger electrode is to be formed.

### Claim 8 (depends on 3)

A solar cell comprising the substrate of claim 3, wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate, and a high-concentration diffusion layer is formed where a finger electrode is to be formed.

### Claim 9 (depends on 4)

A solar cell comprising the substrate of claim 4, wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate, and a high-concentration diffusion layer is formed where a finger electrode is to be formed.

### Claim 10 (depends on 5)

A solar cell comprising the substrate of claim 5, wherein a low-concentration diffusion layer is formed on the light-receiving surface of the substrate, and a high-concentration diffusion layer is formed where a finger electrode is to be formed.
