# US 2013/0153022 A1 · Photoelectric conversion device and method for manufacturing the same

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- Number: US 2013/0153022 A1
- Document ID: US20130153022A1
- Status: Published application
- Kind: A1
- Application number: 13/768,291
- Filed: 2013-02-15
- Published: 2013-06-20
- Earliest claimed: 2010-12-17
- Assignees: Sanyo Electric Co., Ltd.
- Inventors: Azumi UMEDA; Shigeo YATA
- Web page: https://patentgrep.com/patent/US20130153022A1

## CPC

- H10F 77/251: {comprising zinc oxide [ZnO]}
- H10F 10/172: comprising multiple PIN junctions, e.g. tandem cells
- H10F 19/31: having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F 19/804: {Materials of encapsulations}
- H10F 71/138: {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes}
- H10F 77/48: Back surface reflectors [BSR]
- H10F 77/488: {Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/548: Amorphous silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The electric power generation efficiency of a photoelectric conversion device is improved by reducing an absorption loss of light at a back-surface electrode layer. The photoelectric conversion device includes photoelectric conversion units that convert light into electricity, a first zinc oxide layer (40a) formed on the photoelectric conversion units, a second zinc oxide layer (40b) which is formed on the first zinc oxide layer (40a) and to which aluminum and silicon are added, and a reflective metal layer (40c) formed on the second zinc oxide layer (40b).

## Claims

### Claim at position 1

-7. (canceled)

### Claim 8

A photoelectric conversion device, comprising:
a photoelectric conversion unit that converts light into electricity;
a first zinc oxide layer that is formed on the photoelectric conversion unit;
a second zinc oxide layer that is formed on the first zinc oxide layer and to which aluminum and silicon are added; and
a metal layer that is formed on the second zinc oxide layer.

### Claim 9 (depends on 8)

The photoelectric conversion device according to claim 8, wherein
the second zinc oxide layer contains the aluminum in an amount of 0.26 weight percent or more and 1.56 weight percent or less.

### Claim 10 (depends on 8)

The photoelectric conversion device according to claim 8, wherein
the second zinc oxide layer contains the silicon in an amount of 2.33 weight percent or more and 9.33 weight percent or less.

### Claim 11 (depends on 9)

The photoelectric conversion device according to claim 9, wherein
the second zinc oxide layer contains the silicon in an amount of 2.33 weight percent or more and 9.33 weight percent or less.

### Claim 12 (depends on 8)

The photoelectric conversion device according to claim 8, wherein
the first zinc oxide layer is crystalline; and
the second zinc oxide layer is amorphous.

### Claim 13 (depends on 9)

The photoelectric conversion device according to claim 9, wherein
the first zinc oxide layer is crystalline; and
the second zinc oxide layer is amorphous.

### Claim 14 (depends on 10)

The photoelectric conversion device according to claim 10, wherein
the first zinc oxide layer is crystalline; and
the second zinc oxide layer is amorphous.

### Claim 15 (depends on 8)

The photoelectric conversion device according to claim 8, wherein
a total film thickness of the first zinc oxide layer and the second zinc oxide layer is 80 nm or more and 100 nm or less.

### Claim 16 (depends on 9)

The photoelectric conversion device according to claim 9, wherein
a total film thickness of the first zinc oxide layer and the second zinc oxide layer is 80 nm or more and 100 nm or less.

### Claim 17 (depends on 11)

The photoelectric conversion device according to claim 11, wherein
a total film thickness of the first zinc oxide layer and the second zinc oxide layer is 80 nm or more and 100 nm or less.

### Claim 18 (depends on 14)

The photoelectric conversion device according to claim 14, wherein
a total film thickness of the first zinc oxide layer and the second zinc oxide layer is 80 nm or more and 100 nm or less.

### Claim 19 (depends on 8)

A method of manufacturing the photoelectric conversion device according to claim 8, wherein
the second zinc oxide layer is formed by sputtering of a target that contains zinc oxide (ZnO), alumina (Al2O3), and silicon oxide (SiO2).

### Claim 20 (depends on 9)

A method of manufacturing the photoelectric conversion device according to claim 9, wherein
the second zinc oxide layer is formed by sputtering of a target that contains zinc oxide (ZnO), alumina (Al2O3), and silicon oxide (SiO2).

### Claim 21 (depends on 11)

A method of manufacturing the photoelectric conversion device according to claim 11, wherein
the second zinc oxide layer is formed by sputtering of a target that contains zinc oxide (ZnO), alumina (Al2O3), and silicon oxide (SiO2).

### Claim 22 (depends on 14)

A method of manufacturing the photoelectric conversion device according to claim 14, wherein
the second zinc oxide layer is formed by sputtering of a target that contains zinc oxide (ZnO), alumina (Al2O3), and silicon oxide (SiO2).

### Claim 23 (depends on 18)

A method of manufacturing the photoelectric conversion device according to claim 18, wherein
the second zinc oxide layer is formed by sputtering of a target that contains zinc oxide (ZnO), alumina (Al2O3), and silicon oxide (SiO2).

### Claim 24 (depends on 19)

The method of manufacturing the photoelectric conversion device according to claim 19, wherein
the sputtering is performed by using sputtering gas containing oxygen.