# US 2013/0153018 A1 · Solar cell and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0153018 A1 - Document ID: US20130153018A1 - Status: Published application - Kind: A1 - Application number: 13/469,815 - Filed: 2012-05-11 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Assignees: LG Electronics Inc. - Inventors: Kyoungsoo LEE; Myungjun SHIN; Jiweon JEONG - Web page: https://patentgrep.com/patent/US20130153018A1 ## CPC - H10F 77/707: {of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate} - H10F 10/14: Photovoltaic cells having only PN homojunction potential barriers - H10F 77/211: {for photovoltaic cells} - H10F 77/311: {for photovoltaic cells} - H10F 77/703: {of the semiconductor bodies, e.g. textured active layers} - Y02E 10/547: Monocrystalline silicon PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A method for manufacturing a solar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate. ## Claims ### Claim 1 A method for manufacturing a solar cell, comprising: texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method; forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate; forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate. ### Claim 2 (depends on 1) The method according to claim 1, wherein the dry etching method for texturing the front surface of the semiconductor substrate comprises a reactive ion etching method. ### Claim 3 (depends on 1) The method according to claim 1, wherein the front surface of the semiconductor substrate after the texturing has a surface roughness of about 1 μm or less. ### Claim 4 (depends on 3) The method according to claim 3, wherein the front surface of the semiconductor substrate after the texturing has the surface roughness of about 300˜600 nm. ### Claim 5 (depends on 3) The method according to claim 3, further comprising: mirror-polishing the front surface and the back surface of the semiconductor substrate before the texturing of the front surface of the semiconductor substrate, wherein the front surface of the semiconductor substrate after the texturing has a surface roughness larger than that of the back surface. ### Claim 6 (depends on 5) The method according to claim 5, wherein the back surface of the semiconductor substrate after the mirror-polishing has a surface roughness of about 100 nm or less. ### Claim 7 (depends on 1) The method according to claim 1, wherein the first conductive type dopant is a p-type and the second conductive type dopant is an n-type, and wherein the back passivation film comprises a p-type oxidation film. ### Claim 8 (depends on 7) The method according to claim 7, wherein the p-type oxidation film comprises at least one material selected from the group consisting of a rare earth oxide, an aluminum oxide, and a zirconium oxide. ### Claim 9 (depends on 6) The method according to claim 6, further comprising: forming a front passivation film on the front surface of the semiconductor substrate after forming the emitter layer, wherein the front passivation film comprises a silicon oxide film. ### Claim 10 (depends on 1) The method according to claim 1, wherein the first conductive type dopant is an n-type and the second conductive type dopant is a p-type, and wherein the back passivation film comprises a silicon nitride film and a silicon oxide film formed on the silicon nitride film. ### Claim 11 (depends on 10) The method according to claim 10, further comprising: forming a front passivation film on the front surface of the semiconductor substrate after forming the emitter layer, wherein the front passivation film comprises an aluminum oxide film. ### Claim 12 (depends on 1) The method according to claim 1, further comprising: forming a front passivation film on the front surface of the semiconductor substrate after forming the emitter layer, wherein forming the first and second electrodes comprises: forming a second electrode film on the back passivation film; electrically connecting the second electrode film to the semiconductor substrate by a laser firing contact method; forming a first electrode film on the front passivation film; and simultaneously firing the first and second electrode films. ### Claim 13 (depends on 12) The method according to claim 12, wherein the second electrode is in point contact with the semiconductor substrate. ### Claim 14 (depends on 12) The method according to claim 12, wherein, in the simultaneously firing, a material constituting at least one of the back passivation film and the second electrode is diffused into the semiconductor substrate to form a back surface field layer. ### Claim 15 A solar cell, comprising: a semiconductor substrate having a first conductive type dopant, wherein a front surface of the semiconductor substrate has a surface roughness larger than that of a back surface of the semiconductor substrate; an emitter layer formed adjacent to the front surface of the semiconductor substrate and having a second conductive type dopant; a back surface field layer formed adjacent to the semiconductor substrate and having the first conductive type dopant; a front passivation film for passivating the front surface of the semiconductor substrate; a back passivation film for passivating the back surface of the semiconductor substrate; a first electrode electrically connected to the emitter layer; and a second electrode being in partial contact with the back surface of the semiconductor substrate, wherein the front surface of the semiconductor substrate has a surface roughness of about 1 μm or less. ### Claim 16 (depends on 15) The solar cell according to claim 15, wherein the front surface of the semiconductor substrate has the surface roughness of about 300˜600 nm. ### Claim 17 (depends on 15) The solar cell according to claim 15, wherein the back surface of the semiconductor substrate has a surface roughness of about 100 nm or less. ### Claim 18 (depends on 15) The solar cell according to claim 15, wherein the first conductive type dopant is a p-type and the second conductive type dopant is an n-type, and wherein the back passivation film comprises a p-type oxidation film. ### Claim 19 (depends on 18) The solar cell according to claim 18, wherein the p-type oxidation film comprises at least one material selected from the group consisting of a rare earth oxide, an aluminum oxide, and a zirconium oxide. ### Claim 20 (depends on 15) The solar cell according to claim 15, wherein the back surface field layer is entirely formed on the back passivation film, and wherein the second electrode is in point contact with the back surface field layer of the semiconductor substrate.