# US 2013/0152850 A1 · Method and apparatus for monitoring and controlling crystal growth, and probe system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2013/0152850 A1 - Document ID: US20130152850A1 - Status: Published application - Kind: A1 - Application number: 13/556,082 - Filed: 2012-07-23 - Published: 2013-06-20 - Earliest claimed: 2011-12-16 - Inventors: Chia-Ying Hsieh; Chi-Hao Chang; Hsin-Hwa Hu - Web page: https://patentgrep.com/patent/US20130152850A1 ## CPC - C30B 11/003: {Heating or cooling of the melt or the crystallised material} - C30B 11/006: {Controlling or regulating} - C30B 28/06: by normal freezing or freezing under temperature gradient - C30B 29/06: Silicon - G01F 23/226: {measuring the braking of a rotatable element} - Y10T 117/1008: with responsive control means - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - G01F: MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract In a method for monitoring and controlling crystal growth during a crystal growing procedure, heights of a plurality of measuring points on a solid-liquid interface of a crystal material disposed in a crucible are measured, and at least one parameter of the crystal growing procedure is optimized based on the measured heights, so that the solid-liquid interface maintains a dome shape with a predetermined curvature during the crystal growing procedure. ## Claims ### Claim 1 A method for monitoring and controlling crystal growth during a crystal growing procedure, comprising the following steps of: (a) measuring heights of a plurality of measuring points on a solid-liquid interface of a crystal material disposed in a crucible; and (b) automatically optimizing at least one parameter of the crystal growing procedure based on the measured heights, so that the solid-liquid interface maintains a dome shape with a predetermined curvature during the crystal growing procedure. ### Claim 2 (depends on 1) The method as claimed in claim 1, wherein, in step (a), a plurality of probes are used to measure the heights of the measuring points, respectively. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein, in step (a), a probe is moved in an automated manner to different points on the solid-liquid interface to measure the heights of the measuring points, respectively. ### Claim 4 (depends on 3) The method as claimed in claim 3, wherein, in step (a), the probe includes a main portion and a probing portion connected to the main portion, the main portion being movable along a predetermined measuring track and being rotatable around an axis thereof, the probing portion having a tip which is offset from the axis of the main portion and which is disposed for contacting the different points on the solid-liquid interface when the main portion is rotated around the axis of the main portion and is moved along the predetermined measuring track. ### Claim 5 (depends on 1) The method as claimed in claim 1, wherein, in step (b), said at least one parameter includes a heating power during the crystal growing procedure. ### Claim 6 An apparatus for monitoring and controlling crystal growth during a crystal growing procedure, comprising: a growth chamber; a crucible disposed in said growth chamber for receiving a crystal material therein; a heating system disposed in said growth chamber and arranged around said crucible; a probe system disposed at said growth chamber and including a probe extended into said crucible for contacting a solid-liquid interface of the crystal material in said crucible during the crystal growing procedure so as to obtain crystal growth information; and a control system coupled to said probe system for receiving the crystal growth information therefrom and to said heating system for automatically controlling heating operation of said heating system according to the crystal growth information received from said probe system. ### Claim 7 (depends on 6) The apparatus as claimed in claim 6, wherein said probe system further includes a force sensor disposed on said probe for determining whether a tip of said probe comes into contact with the solid-liquid interface. ### Claim 8 (depends on 7) The apparatus as claimed in claim 7, wherein said force sensor includes at least one of a strain gauge and a load cell. ### Claim 9 (depends on 6) The apparatus as claimed in claim 6, wherein said probe system further includes a probe control mechanism connected to said probe for raising and lowering said probe relative to said crucible. ### Claim 10 (depends on 9) The apparatus as claimed in claim 9, wherein said probe includes a main portion and a probing portion connected to said main portion and extended into said crucible, said main portion being driven by said probe control mechanism to move along a predetermined measuring track and to rotate around an axis of said main portion, said probing portion having a tip which is offset from the axis of said main portion and which is disposed for contacting the solid-liquid interface, said tip being able to contact different points on the solid-liquid interface when said probe is driven by said probe control mechanism. ### Claim 11 (depends on 10) The apparatus as claimed in claim 10, wherein said probe control mechanism includes a probe seal attached to said growth chamber and connected to said probe, said probe seal being rotatable around a rotary axis, the axis of said main portion of said probe being offset from the rotary axis to result in movement of said main portion along the predetermined measuring track when said probe seal rotates. ### Claim 12 (depends on 11) The apparatus as claimed in claim 11, wherein said probe control mechanism further includes: a guiding component disposed on said probe seal and disposed parallel to said probe; a sliding component slidably disposed on said guiding component and connected to said probe; an elevating motor disposed on said probe seal and connected to said sliding component for controlling raising and lowering of said probe; and a rotating motor disposed on said sliding component and connected to said probe for controlling rotation of said main portion of said probe around the axis of said main portion. ### Claim 13 (depends on 12) The apparatus as claimed in claim 12, wherein said probe control mechanism further includes a position measuring device for measuring vertical displacement of said probe. ### Claim 14 (depends on 13) The apparatus as claimed in claim 13, wherein said position measuring device is connected to said probe seal and said sliding component and is configured to measure the vertical displacement of said probe by measuring vertical displacement of said sliding component relative to said probe seal. ### Claim 15 A probe system for monitoring crystal growth during a crystal growing procedure in a crucible, comprising: a probe having a main portion and a probing portion connected to said main portion and to be extended into the crucible, said main portion being movable along a predetermined measuring track and being rotatable around an axis of said main portion, said probing portion having a tip which is offset from the axis of said main portion and which is disposed for contacting a solid-liquid interface of crystal material in the crucible during the crystal growing procedure; and a probe control mechanism connected to said probe for raising and lowering said probe relative to the crucible and for controlling movement of said main portion of said probe along the predetermined measuring track and rotation of said main portion around the axis of said main portion so that said tip is able to contact different points on the solid-liquid interface. ### Claim 16 (depends on 15) The probe system as claimed in claim 15, further comprising a force sensor disposed on said probe for determining whether said tip of said probing portion comes into contact with the solid-liquid interface. ### Claim 17 (depends on 15) The probe system as claimed in claim 15, wherein said probe control mechanism includes: a probe seal having a rotatable inner cylinder connected to said main portion of said probe, said inner cylinder being rotatable around a rotary axis, the axis of said main portion of said probe being offset from the rotary axis to result in movement of said main portion along the predetermined measuring track when said inner cylinder rotates; a guiding component disposed on said probe seal and disposed parallel to said probe; a sliding component slidably disposed on said guiding component and connected to said probe; an elevating motor disposed on said probe seal and connected to said sliding component for controlling raising and lowering of said probe; and a rotating motor disposed on said sliding component and connected to said probe for controlling rotation of said main portion of said probe around the axis of said main portion. ### Claim 18 (depends on 17) The probe system as claimed in claim 17, wherein said probe control mechanism further includes a position measuring device for measuring vertical displacement of said probe. ### Claim 19 (depends on 18) The probe system as claimed in claim 18, further comprising a force sensor disposed on said probe for determining whether said tip of said probing portion comes into contact with the solid-liquid interface. ### Claim 20 (depends on 16) The probe system as claimed in claim 16, wherein said probe control mechanism includes a position measuring device for measuring vertical displacement of said probe.