Semiconductor Device and Method for Preparing the Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAkira Ishikawa
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Abstract
A semiconductor device and a method for preparing the same that can solve crack of a semiconductor film, capacitance electrodes and the like due to stress when forming a source electrode and a drain electrode in a semiconductor device having a thin film transistor and a holding capacitance with three or more capacitance electrodes is provided. Before forming the source electrode and the drain electrode, a crystalline silicon film for relaxing the stress is formed, then a contact hole connecting to the semiconductor film of the thin film transistor is opened, and a metal film to be the source electrode and the drain electrode is formed.
Claims10
1-35. (canceled)
A semiconductor device comprising:
- a thin film transistor comprising a source electrode and a drain electrode;
- a capacitor element comprising a first electrode and a second electrode;
- a shielding film overlapping with the capacitor element;
- and
- a pixel electrode provided over the shielding film and overlapping with the capacitor element,
- wherein the shielding film is arranged in a reticulation pattern,
- wherein the first electrode is formed from a first conductive layer, and
- wherein the first conductive layer comprises a semiconductor film doped with an impurity element.
Dependencies are inferred from the claim text.