Pattern forming method, chemical amplification resist composition and resist film
AssigneeFUJIFILM Corporation
InventorsKaoru IWATO, Shohei KATAOKA
Life of this patent
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Abstract
A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.
Claims13
A pattern forming method, comprising:
- (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent;
- (ii) exposing the film;
- and
- (iii) performing development by using a developer containing an organic solvent,
- wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and
- the leaving group contains a fluorine atom.
A chemical amplification resist composition, comprising:
- (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid;
- (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation;
- and
- (C) a solvent,
- wherein a leaving group capable of decomposing and leaving by an action of an acid is:
- (ii) a structure represented by the following formula (b), which decomposes by an action of an acid to generate one alcoholic hydroxyl group;
- or
- (iii) a structure represented by the following formula (c), which decomposes by an action of an acid to generate two or three alcoholic hydroxyl groups:
- wherein Pf2 represents a monovalent fluorine atom-containing group capable of decomposing and leaving by an action of an acid;
- Pf3 represents a z-valent fluorine atom-containing group capable of decomposing and leaving by an action of an acid;
- z represents 2 or 3;
- and
- * represents a bond to a main chain or side chain of the resin (A).
Dependencies are inferred from the claim text.