Temperature Compensation in a Semiconductor Micromechanical Resonator Via Charge Carrier Depletion
AssigneeGeorgia Tech Research Corporation
InventorsFarrokh Ayazi, Ashwin Samarao
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Abstract
A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.
Claims21
A semiconductor resonator, comprising:
- a substrate having a thickness extending between a first end and a second end;
- and
- a pn-junction along the thickness of the substrate forming a free charge carrier depletion region.
A semiconductor resonator, comprising:
- a substrate comprising
- a crystal lattice structure;
- and
- wherein the crystal lattice structure is doped at degenerate levels.
A method of compensating a temperature coefficient of a semiconductor resonator, comprising:
- A) providing a substrate;
- B) creating a pn-junction based free charge carrier depletion region within a thickness of the substrate of the resonator.
Dependencies are inferred from the claim text.