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US 2013/0097364 A1Published application
Nonvolatile memory device and related method of operation
AssigneeSamsung Electronics Co., Ltd.
InventorsKYOUNG-LAE CHO, JAE-HONG KIM, JUN-JIN KONG
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Abstract
A method of operating a nonvolatile memory device comprises defining a bit ordering for a plurality of n-bit (n>2) multi-level cells such that bit-reading numbers associated with different pages of the n-bit multi-level cells are substantially equalized, wherein the bit ordering assigns at least one bit “0” to an erased state of the n-bit multi-level cells, and programming n-bit data into each of the n-bit multi-level cells according to the bit ordering.
Claims20
A method of operating a nonvolatile memory device, comprising:
- defining a bit ordering for a plurality of n-bit (n>2) multi-level cells such that bit-reading numbers associated with different pages of the n-bit multi-level cells are substantially equalized, wherein the bit ordering assigns at least one bit “0” to an erased state of the n-bit multi-level cells;
- and
- programming n-bit data into each of the n-bit multi-level cells according to the bit ordering.
A memory system, comprising:
- a nonvolatile memory device comprising a plurality of n-bit (n>2) multi-level cells;
- a controller configured to program n-bit data into the n-bit multi-level cells according to a bit ordering in which bit-reading numbers associated with different pages of the n-bit multi-level cells are substantially equalized and in which at least one bit “0” is assigned to an erased state of the n-bit multi-level cells.
Dependencies are inferred from the claim text.