Substrate processing method and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsTatsushi UEDA, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
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Abstract
A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
Claims12
A substrate processing method comprising:
- generating mixed plasma by plasma discharge of a mixed gas of hydrogen gas and oxygen gas or oxygen-containing gas supplied to a processing chamber, and processing a substrate, on a surface of which a polysilicon film and a metal film are exposed, with the mixed plasma;
- and
- generating hydrogen plasma by the plasma discharge of hydrogen gas supplied to the processing chamber, and processing the substrate with the hydrogen plasma.
A substrate processing apparatus comprising:
- a processing chamber in which a substrate, on a surface of which a polysilicon film and a metal film are exposed, is processed;
- a mixed gas inlet port configured to introduce a mixed gas of hydrogen gas and oxygen gas or oxygen-containing gas into the processing chamber;
- a hydrogen gas inlet port configured to introduce the hydrogen gas into the processing chamber;
- an exhaust port configured to evacuate the interior of the processing chamber;
- a plasma generating part configured to generate mixed plasma by plasma discharge of the mixed gas introduced into the processing chamber, and generating hydrogen plasma by the plasma discharge of the hydrogen gas introduced into the processing chamber;
- and
- a controller configured to perform control:
- processing the substrate with the mixed plasma by generating the mixed plasma by the plasma discharge of the mixed gas introduced through the mixed gas inlet port and supplying the mixed plasma to the substrate while exhausting the mixed plasma through said exhaust port;
- and processing the substrate with the hydrogen plasma by generating the hydrogen plasma by the plasma discharge of the hydrogen gas introduced through the hydrogen gas inlet port and supplying the hydrogen plasma to the substrate while exhausting the hydrogen plasma through the exhaust port.
A manufacturing method of a semiconductor device comprising:
- generating mixed plasma by plasma discharge of a mixed gas of hydrogen gas and oxygen gas or oxygen-containing gas supplied to a processing chamber, and processing a substrate, on a surface of which a polysilicon film and a metal film are exposed, with the mixed plasma;
- and
- generating hydrogen plasma by the plasma discharge of hydrogen gas supplied to the processing chamber, and processing the substrate with the hydrogen plasma.
Dependencies are inferred from the claim text.