Semiconductor device manufacturing method and substrate processing apparatus

A semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate, the method comprising:

• (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate;
• (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate;
• (c) removing an inner atmosphere of the processing chamber;
• (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.;
• (e) removing the inner atmosphere of the processing chamber;
• and
• (f) supplying the modifying gas into the processing chamber while activating the modifying gas to modify the source gas adsorbed on the substrate,
• wherein steps (a) to (f) are sequentially performed.

A substrate processing apparatus comprising:

• a processing chamber configured to accommodate a substrate;
• a source gas supply system configured to supply a source gas into the processing chamber;
• a reactive gas supply system configured to supply a reactive gas different from the source gas into the processing chamber;
• a modifying gas supply system configured to supply a modifying gas into the processing chamber;
• an exhaust system configured to exhaust an inside of the processing chamber;
• and
• a controller configured to control the source gas supply system, the reactive gas supply system, the modifying gas supply system and the exhaust system such that a film of less than one atomic layer is formed on the substrate by performing a process including:
• (a) supplying the source gas into the processing chamber accommodating the substrate to adsorb the source gas on the substrate;
• (b) supplying the reactive gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate;
• (c) removing an inner atmosphere of the processing chamber;
• and (d) supplying the modifying gas into the processing chamber to modify the source gas adsorbed on the substrate, the source gas being reacted with the reactive gas.