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US 2013/0095665 A1Published application
Systems and methods for processing substrates
AssigneeTes Co., Ltd
InventorsDong-Duk Lee, U-Young Lee, Sang-Sun Lee
Life of this patent
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Abstract
A substrate processing system comprises a first processing module in which a process gas is supplied to a substrate to etch a silicon oxide layer formed on the substrate and a second processing module in which an activated oxygen gas is supplied to the substrate. With the system and a method using the same, the silicon oxide layer can be etched and a condensation layer and/or fumes and/or photoresist residues can be removed in a cost-effective way.
Claims19
A substrate processing system comprising:
- a first processing module configured to provide a process gas containing hydrogen fluoride (HF) to a substrate on which a silicon oxide layer is formed, thereby etching the silicon oxide layer formed on the substrate;
- and
- a second processing module configured to provide activated oxygen gas to the substrate.
A method of processing a substrate, comprising:
- a first processing step of providing a process gas containing hydrogen fluoride (HF) to a substrate on which a silicon oxide layer is formed, thereby etching the silicon oxide layer formed on the substrate;
- and
- a second processing step of supplying activated oxygen gas to the substrate.
Dependencies are inferred from the claim text.