Cmp method, cmp apparatus and method of manufacturing semiconductor device
OwnerAkifumi GAWASE, Yukiteru Matsui +2inventors
InventorsAkifumi GAWASE, Yukiteru Matsui, Gaku Minamihaba, Hajime Eda
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Abstract
According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.
Claims20
A CMP method comprising:
- starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film;
- and
- stopping the polishing when the polishing stopper is exposed,
- wherein the slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.
A CMP apparatus comprising:
- a supplying portion supplying a slurry to a surface portion of a polishing pad, the slurry including a silicon oxide abrasive, a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less;
- a holding portion contacting a semiconductor substrate having a silicon oxide film and a silicon nitride film with the surface portion of the polishing pad in a condition of holding the semiconductor substrate;
- and
- a control portion which is configured to start a polishing of the silicon oxide film by using the slurry, and stop the polishing when the silicon nitride film as a polishing stopper film is exposed.
A method of manufacturing a semiconductor device, the method comprising:
- forming a silicon nitride film as a polishing stopper film on a semiconductor substrate;
- forming a trench in the semiconductor substrate and the silicon nitride film;
- forming a silicon oxide film on the silicon nitride film to fill the trench with the silicon oxide film;
- starting a polishing of the silicon oxide film by a CMP method using a slurry including a silicon oxide abrasive, a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less;
- and
- stopping the polishing when the silicon nitride film as the polishing stopper film is exposed.
Dependencies are inferred from the claim text.