Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsYukiteru MATSUI, Gaku MINAMIHABA, Hajime EDA, Masayoshi IWAYAMA, Minoru AMANO, Masatoshi YOSHIKAWA, Motoyuki SATO, Kyoichi SUGURO, Masako KODERA
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Abstract
According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.
Claims7
A method of manufacturing a semiconductor device, the method comprising:
- forming a contact plug by
- forming a first metal material;
- and
- polishing the first metal material by a CMP-process until a roughness of an upper surface of the contact plug becomes 0.2 nm or less, and
- wherein the CMP-process is executed by using an acid-slurry comprising a colloidal silica.
A method of manufacturing a semiconductor device, the method comprising:
- forming a contact plug by
- polishing a first metal material using a CMP-process after forming the first metal material, and
- smoothing the first metal material using a gas cluster ion beam method after the forming the contact plug,
- wherein the polishing and the smoothing are executed until a roughness of an upper surface of the contact plug becomes 0.2 nm or less.
Dependencies are inferred from the claim text.