Non-volatile memory devices including vertical nand strings and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBeom-jun Jin, Byung-seo Kim, Sung-Dong Kim
Life of this patent
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Abstract
A NAND based non-volatile memory device can include a plurality of memory cells vertically arranged as a NAND string and a plurality of word line plates each electrically connected to a respective gate of the memory cells in the NAND string. A plurality of word line contacts can each be electrically connected to a respective word line plate, where the plurality of word line contacts are aligned to a bit line direction in the device.
Claims12
A method of fabricating a three-dimensional semiconductor device, comprising:
- forming a stack of wiring layers on a substrate including first, second, and common regions;
- performing a first patterning step to the stack to form a first etched region on the first and common regions of the substrate;
- and
- performing a second patterning step to the stack to form a second etched region on the second and common regions of the substrate,
- wherein the first and second etched regions are formed to have different depths from each other.
A method of fabricating a three-dimensional semiconductor device, comprising:
- forming a stack of wiring layers on a substrate;
- forming n first contact regions, whose top surfaces are exposed at different levels from each other (where n is an integer of two or more);
- and
- performing a patterning step to the stack provided with the n first contact regions to form m second contact regions,
- wherein m is an integer of (n+2) or more.
A method of fabricating a three-dimensional semiconductor device, comprising:
- forming a plurality of wiring layers on a substrate;
- and
- patterning the wiring layers to form contact regions that are exposed at different levels from each other,
- wherein the pattering of the wiring layers comprises a plurality of etching steps performed in such a way that etched regions formed thereby have differences in both of depth and position from each other.
-13. (canceled)
Dependencies are inferred from the claim text.