Method for fabricating semiconductor device

Abstract

A method for fabricating a semiconductor device includes: forming an interlayer insulating film on a substrate; forming a first hard mask formation film on the interlayer insulating film; altering the first hard mask formation film; after the altering of the first hard mask formation film, transferring an interconnect groove pattern to the altered first hard mask formation film to form a first hard mask made of the altered first hard mask formation film; and etching the interlayer insulating film using the first hard mask to form an interconnect groove in the interlayer insulating film. The first hard mask formation film is made of a metal film or a metallic compound film.

Dependencies are inferred from the claim text.