Tunable Semiconductor Component Provided with a Current Barrier

A method for offsetting leakage of electrical current of a semiconductor component, comprising:

• laying down a first conductive region having a first type dopant composition, said first conductive region defining a first link member and a second link member, said first conductive region having a heat modifiable dopant profile;
• laying down second region having a second type dopant composition, said second region contiguous with said first conductive region, said second type dopant composition non-conductive relative to said first type dopant composition, said second region defining a gap region between said first and second link members, said second region having a heat modifiable dopant profile, at least with respect to said gap region;
• and
• laying down a current mask region having a third type dopant composition, said current mask region disposed between and spaced apart from said first link member and said second link member, said current mask region interrupts said gap region for offsetting leakage of electrical current across the gap region between the first link member and the second link members, said current mask region having a heat modifiable dopant profile.