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US 2013/0095641 A1Published application
Method Of Manufacturing Gallium Nitride Film
AssigneeSamsung Corning Precision Materials Co., Ltd.
InventorsSungKeun Lim, Joon Hoi Kim, Boik Park, CheolMin Park, Hyun Jong Park, JunYoung Bae, Seonghwan Shin, WonJo Lee, JunSung Choi, Byungkyu Chung
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Abstract
A method of manufacturing a gallium nitride (GaN) film in which defects in a GaN film that grows can be reduced. The method includes the step of growing a GaN nano-rod on a substrate, the nano-rod having a circumferential groove in an outer periphery thereof, and the step of growing a GaN film on the GaN nano-rod.
Claims11
A method of manufacturing a gallium nitride film, comprising:
- growing a gallium nitride (GaN) nano-rod on a substrate, the nano-rod having a circumferential groove in an outer periphery thereof;
- and
- growing a gallium nitride film on the gallium nitride nano-rod.
Dependencies are inferred from the claim text.