Methods of manufacturing variable resistance memory and semiconductor device

A method of manufacturing a variable resistance memory, comprising:

• forming a hole in an insulating interlayer that covers a substrate;
• forming a first electroconductive film on said insulating interlayer to fill said hole with said first electroconductive film;
• removing a part of said first electroconductive film so as to make a top surface of said first electroconductive film in said hole lower than a top surface of said insulating interlayer;
• forming a variable resistance film in said hole extending from a top surface of said insulating interlayer to cover said top surface of said first electroconductive film with said variable resistance film in said hole, after removing said part of said first electroconductive film;
• and
• forming a second electroconductive film in said hole extending from said top surface of said insulating interlayer after forming said variable resistance film.

A method of manufacturing a semiconductor device, comprising:

• forming a first transistor on a substrate;
• forming a first insulating layer that covers said substrate;
• forming a conductive plug in said first insulating layer, said conductive plug being electrically connected to one of terminals of said first transistor;
• forming an information storing film on said first insulating layer, said information storing film covering a top surface of said conductive plug;
• forming a second insulating layer above said first insulating layer, said second insulating layer covering a top surface of said conductive plug;
• forming a hole in said second insulating layer by removing a part of said second insulating layer disposed on said conductive plug;
• and
• forming a first electroconductive film in said hole extending from a top surface of said second insulating layer so as to be in contact with said information storing film in said hole and to be electrically connected to said conductive plug via said information storing film.