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US 2013/0095631 A1Published application
Bipolar transistor with low resistance base contact and method of making the same
AssigneeInternational Business Machines Corporation
InventorsFrancois PAGETTE, Kathryn T. SCHONENBERG
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Abstract
Embodiments of the present invention provide a bipolar transistor with low resistance base contact and method of manufacturing the same. The bipolar transistor includes an emitter, a collector, and an intrinsic base between the emitter and the collector. The intrinsic base extends laterally to an extrinsic base. The extrinsic base further includes a first semiconductor material with a first bandgap and a second semiconductor material with a second bandgap that is smaller than the first bandgap.
Claims14
A method of manufacturing a bipolar transistor, the method comprising:
- providing a semiconductor substrate as a collector;
- forming an intrinsic base on said semiconductor substrate;
- forming an extrinsic base on an outer portion of said intrinsic base, said extrinsic base having a first layer of a first semiconductor material;
- forming an emitter on an inner portion of said intrinsic base, said emitter being separated from said extrinsic base by one or more sets of spacers;
- and
- forming a second layer of a second semiconductor material of said extrinsic base, said second semiconductor material having a smaller bandgap than that of said first semiconductor material.
3 more elements
Dependencies are inferred from the claim text.