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US 2013/0095601 A1Published application
Deposition chamber cleaning system and method
AssigneeFirst Solar, Inc.
InventorMarkus E. Beck
Life of this patent
Estimating the term…
Abstract
An in-situ method of cleaning a vacuum deposition chamber can include flowing at least one reactive gas into the chamber.
Claims20
A method of cleaning a deposition chamber comprising:
- pulsing a reactive gas comprising a hydrogen halide into a deposition chamber containing a metal chalcogenide formed on a deposition chamber surface to form a purgable material;
- and
- purging the purgable material from the deposition chamber.
A method of manufacturing a semiconductor device, comprising:
- transporting a substrate into a deposition chamber;
- forming a buffer layer adjacent to the substrate, wherein forming the buffer layer comprises pulsing at least one metal precursor and pulsing at least one chalcogen precursor into the chamber;
- transporting the substrate with the deposited buffer layer out of the chamber;
- and
- pulsing a reactive gas comprising a hydrogen halide into the deposition chamber to react with a metal chalcogenide formed on a deposition chamber surface to form a purgable material;
- and
- purging the purgable material from the deposition chamber.
4 more elements
20-26. (canceled)
Dependencies are inferred from the claim text.