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US 2013/0095433 A1Published application
Photolithography method including dual development process
AssigneeSamsung Electronics Co., Ltd.
InventorsEunsung KIM, Kyoungseon KIM, Jaewoo NAM, Chulho SHIN, Shiyong YI
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Abstract
A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.
Claims20
A photolithography method, comprising:
- coating a photoresist on an active region and an edge region of a wafer;
- exposing the photoresist on the edge region to first ultraviolet rays;
- exposing the photoresist on the active region to second ultraviolet rays;
- depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region;
- and
- developing the photoresist on the active region using a second developing solution.
3 more elements
A photolithography method, comprising:
- coating a photoresist on an active region and an edge region of a wafer;
- exposing the photoresist on the edge region to first ultraviolet rays;
- performing a positive tone development process on the photoresist on the edge region;
- exposing the photoresist on the active region to second ultraviolet rays;
- and
- performing a negative tone development process on the photoresist on the active region.
3 more elements
Dependencies are inferred from the claim text.