Resist composition for euv or eb and method of forming resist pattern
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsMasahito Yahagi, Jun Iwashita
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorsMasahito Yahagi, Jun Iwashita
Estimating the term…
The present invention relates to a resist composition for EUV or EB containing a base component (A) which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and a resin component (W) that contains at least one atom selected from a fluorine atom or a silicon atom and contains a polarity conversion group that exhibits increased polarity after decomposition by the action of base, wherein the base component (A) contains a component (A1) which contains a structural unit (a0) having a group represented by general formula (a0-1) or (a0-2) shown below, and the amount of the resin component (W) relative to 100 parts by weight of the base component (A) is 1 to 15 parts by weight. In the formulas, Q1 and Q2 represents a single bond or a divalent linking group; R3 to R5 represents an organic group, and —R3—S+(R4)(R5) has one aromatic ring or no aromatic ring in total; V− represents a counteranion; A− represents an organic group containing an anion moiety; and Mm+ represents a mono- to tri-valent organic cation, provided that Mm+ has one aromatic ring or no aromatic ring.
A resist composition for EUV or EB comprising:
A resist composition comprising:
A resist composition for EUV or EB comprising:
Dependencies are inferred from the claim text.