Lithography Mask and Method of Forming a Lithography Mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChue-San Yoo, Chun-Lang Chen
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Abstract
A first embodiment is a lithography mask comprising a transparent substrate and a first molybdenum silicon nitride (MoxSiyNz) layer. The first MoxSiyNz layer is over the transparent substrate. A percentage of molybdenum (x) of the first MoxSiyNz layer is between 1 and 2. A percentage of silicon (y) of the first MoxSiyNz layer is between 50 and 55. A percentage of nitride (z) of the first MoxSiyNz layer is between 40 and 50. The first MoxSiyNz layer has an opening therethrough.
Claims20
A lithography mask comprising:
- a transparent substrate;
- and
- a first molybdenum silicon nitride (MoxSiyNz) layer over the transparent substrate, a percentage of molybdenum (x) of the first MoxSiyNz layer being between 1 and 2, a percentage of silicon (y) of the first MoxSiyNz layer being between 50 and 55, and a percentage of nitrogen (z) of the first MoxSiyNz layer being between 40 and 50, the first MoxSiyNz layer having an opening therethrough.
A lithography mask comprising:
- a substrate;
- and
- a molybdenum-containing layer over a surface of the substrate, the molybdenum-containing layer comprising a first portion with a first percentage of molybdenum and a second portion with a second percentage of molybdenum, wherein the first percentage and the second percentage are different.
A method for forming a lithography mask, the method comprising:
- forming a molybdenum-containing layer over a transparent substrate, the molybdenum-containing layer comprising a first portion with a first percentage of molybdenum and a second portion with a second percentage of molybdenum, the first percentage being different from the second percentage;
- and
- forming a first opening through the molybdenum-containing layer.
Dependencies are inferred from the claim text.