Silicon carbide substrate, silicon carbide ingot, and method of manufacturing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorsMakoto SASAKI, Taro NISHIGUCHI
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Abstract
A silicon carbide substrate and a silicon carbide ingot excellent in uniformity in characteristics, and a method of manufacturing the same are obtained. A method of manufacturing a silicon carbide ingot includes the steps of preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide and growing a silicon carbide layer on a surface of the base substrate. In the step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of the silicon carbide layer is set to 20° C./cm or more.
Claims15
A method of manufacturing a silicon carbide ingot, comprising the steps of:
- preparing a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide;
- and
- growing a silicon carbide layer on a surface of said base substrate,
- in said step of growing a silicon carbide layer, a temperature gradient in a direction of width when viewed in a direction of growth of said silicon carbide layer being set to 20° C./cm or more.
A silicon carbide ingot, comprising:
- a base substrate having an off angle with respect to a (0001) plane not greater than 10° and composed of single crystal silicon carbide;
- and
- a silicon carbide layer formed on a surface of said base substrate,
- a surface of said silicon carbide layer located opposite to a side where said base substrate is located including a (0001) facet plane, and
- said (0001) facet plane including a central portion of the surface of said silicon carbide layer and extending from said central portion to a position at a distance of 10% of a width of said surface from an outer peripheral end of said surface.
Dependencies are inferred from the claim text.