Loading patent…
AssigneeSino-American Silicon Products Inc.
InventorsSung-Lin HSU, Cheng-Jui YANG, Pei-Kai HUANG, Sheng-Hua NI, Yu-Min YANG, Ming-Kung HSIAO, Wen-Huai YU, Ching-Shan LIN, Wen-Ching HSU, Chung-Wen LAN
Estimating the term…
A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
A method for fabricating a crystalline silicon ingot, comprising:
A crystalline silicon ingot having a bottom and a vertical direction, comprising multiple silicon crystal grains growing along said vertical direction, wherein said bottom has a silicon crystal grain with a first average crystal grain size of less than about 12 mm.
A crystalline silicon ingot having a bottom and a vertical direction, comprising multiple silicon crystal grains growing along said vertical direction, wherein said bottom has a silicon crystal grain with a first average crystal grain size of less than about 12 mm, wherein said crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm, wherein said silicon crystal grain at said upper portion of said crystalline silicon ingot has a defect density less than 20% in term of defect area ratio.
Dependencies are inferred from the claim text.