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US 2013/0094299 A1Published application
Complementary Reference Method for High Reliability Trap-Type Non-Volatile Memory
AssigneeHalo LSI, Inc.
InventorsNori Ogura, Tomoko Ogura, Seiki Ogura
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Abstract
Methods of complementary pairing of memory cells are described. These methods include two physical memory cells in a complementary pair, a complementary pair of reference cells for each erase block, and a physical complementary pair storing multiple data bits.
Claims2
A method of complementary pairing comprising:
- storing N bits of data in a complementary pair of memory cells wherein the number of levels stored in said pair is 2N and wherein the number of level pair groupings is 2N/2.
Dependencies are inferred from the claim text.