Memory device and method of reading data from memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsCHANG-KYU SEOL, JUN-JIN KONG
Life of this patent
Estimating the term…
Abstract
A method is provided for reading data from memory cells, including at least one victim cell and at least one aggressor cell, using an element graph. The method includes defining function nodes corresponding to probability density functions with respect to a first physical characteristic of the at least one victim cell and a second physical characteristic of the at least one aggressor cell, defining variable nodes corresponding to at least one first data value stored in the at least one victim cell and at least one second data value stored in the at least one aggressor cell, and defining edges connecting the function nodes and the variable nodes.
Claims20
A method of reading data from a plurality of memory cells, comprising at least one victim cell and at least one aggressor cell using an element graph, the method comprising:
- defining function nodes corresponding to probability density functions with respect to a first physical characteristic of the at least one victim cell and a second physical characteristic of the at least one aggressor cell;
- defining variable nodes corresponding to at least one first data value stored in the at least one victim cell and at least one second data value stored in the at least one aggressor cell;
- and
- defining edges connecting the function nodes and the variable nodes.
A method of reading data of a plurality of memory cells, comprising at least one victim cell and at least one aggressor cell, the method comprising:
- sensing a physical characteristic of the at least one aggressor cell;
- sensing a physical characteristic of the at least one victim cell;
- and
- determining a data value of the at least one aggressor cell based on the physical characteristic of the at least one aggressor cell and the physical characteristic of the at least one victim cell.
A memory device, comprising:
- a storage unit comprising a memory cell array having a plurality of memory cells, including a victim cell and an aggressor cell adjacent the victim cell in a cell string, wherein a threshold voltage of the victim cell varies due to the aggressor cell;
- and
- a control unit configured to control storage of data in the plurality of memory cells in the storage unit by presenting a relationship between data stored in the victim and aggressor cells and physical characteristics indicating the victim and aggressor cells in an element graph, and reading the data stored in the victim and aggressor cells by applying a message passing algorithm to the element graph.
Dependencies are inferred from the claim text.