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US 2013/0094290 A1Published application
Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
AssigneeSeagate Technology LLC
InventorsArvind Sridharan, Ara Patapoutian
Life of this patent
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Abstract
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells. Based on cell counts within the groups, it can be determined that a shift in a reference voltage will reduce a collective bit error rate of the cells. The shift can be applied to data access operations affecting the cells.
Claims20
A method comprising:
- assigning cells of a solid-state, non-volatile memory to one of a plurality of groups, wherein each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells;
- based on cell counts within the groups, determining that a shift in a reference voltage will reduce a collective bit error rate of the cells;
- and
- applying the shift to data access operations affecting the cells.
1 more element
An apparatus comprising:
- a controller capable of being coupled to cells of a solid-state, non-volatile memory, the controller configured to perform:
- assigning each of the cells to one of a plurality of groups, wherein each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells;
- based on cell counts within the groups, determining that a shift in a reference voltage will reduce a collective bit error rate of the cells;
- and
- applying the shift to data access operations affecting the cells.
2 more elements
A method comprising:
- assigning multi-level cells of a solid-state, non-volatile memory to one of a plurality of groups p(b,r), wherein p(b,r) refers to a number of cells having expected symbol values of b being read in voltage region r, wherein r represents regions adjacent a reference voltage, wherein the regions are used to determine the symbol values of b;
- based on evaluating an expression based on p(r,b), adjusting the reference voltage to reduce a collective bit error rate of the cells.
Dependencies are inferred from the claim text.