Magnetoresistance effect element and magnetic memory

A magneto resistive effect element comprising:

• a pinned layer with a fixed magnetization direction;
• a recording layer with a variable magnetization direction;
• and
• a first non-magnetic layer disposed between the pinned layer and the recording layer,
• wherein:
• one of the pinned layer and the recording layer is formed from a ferromagnet including at least one type of a 3d transition metal and enabling the magnetization direction to be changed from a parallel direction to a perpendicular direction with respect to a film plane by a film thickness control;
• the magnetization direction is oriented in the perpendicular direction with respect to the film plane by the film thickness control;
• the pinned layer is crystallized;
• and
• the recording layer is in an amorphous state.

A magneto resistive effect element comprising:

• a pinned layer with a fixed magnetization direction;
• a recording layer with a variable magnetization direction;
• and
• a first non-magnetic layer disposed between the pinned layer and the recording layer,
• wherein:
• at least one of the pinned layer and the recording layer is formed from a ferromagnet including at least one type of a 3d transition metal and enabling the magnetization direction to be changed from a parallel direction to a perpendicular direction with respect to a film plane by a film thickness control;
• and
• the magnetization direction is oriented in the perpendicular direction with respect to the film plane by the film thickness control;
• the magneto resistive effect element further comprising:
• a second non-magnetic layer disposed on a surface of the pinned layer on a side opposite to the first non-magnetic layer;
• and
• a third non-magnetic layer disposed on a surface of the recording layer on a side opposite to the first non-magnetic layer,
• wherein the second non-magnetic layer is of a material with a large spin-orbit interaction compared with the third non-magnetic layer.

A magneto resistive effect element comprising:

• a pinned layer with a fixed magnetization direction;
• a recording layer with a variable magnetization direction;
• and
• a first non-magnetic layer disposed between the pinned layer and the recording layer,
• wherein:
• one of the pinned layer and the recording layer is formed from a ferromagnet including at least one type of a 3d transition metal and enabling the magnetization direction to be changed from a parallel direction to a perpendicular direction with respect to a film plane by a film thickness control;
• and
• the magnetization direction is oriented in the perpendicular direction with respect to the film plane by the film thickness control,
• the magneto resistive effect element further comprising a second non-magnetic layer disposed on a surface of the pinned layer on a side opposite to the first non-magnetic layer,
• wherein the second non-magnetic layer is of a material containing oxygen.