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US 2013/0094282 A1Published application
Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
AssigneeInternational Business Machines Corporation
InventorsGuohan Hu, Yu Lu
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Abstract
A magneto resistive random access memory system includes a first magnetic-tunnel-junction device coupled to a first bit-line, a second magnetic-tunnel-junction device coupled to a second bit-line, a selection transistor coupled to the first and second bit-lines and a word-line coupled to the selection transistor.
Claims25
A magneto resistive random access memory (MRAM) system, comprising:
- a first magnetic-tunnel-junction (MTJ) device coupled to a first bit-line;
- a second MTJ device coupled to a second bit-line;
- a selection transistor coupled to the first and second bit-lines;
- and
- a word-line coupled to the selection transistor.
2 more elements
A spin-momentum-transfer (SMT) magnetoresistive random access memory (MRAM) system, comprising:
- a plurality of magnetic-tunnel-junction (MTJ) devices;
- and
- a selection transistor coupled to the plurality of MTJ devices.
A method for operating a spin-momentum-transfer (SMT) magnetoresistive random access memory (MRAM) system, the method comprising:
- sensing resistance values from a first magnetic-tunnel-junction (MTJ) device to read data from the first MTJ device, the first MTJ device having a first area;
- and
- sensing resistance values from a second MTJ device to read data from the second MTJ device, the second MTJ device having a second area,
- wherein the first and second areas are not equal.
1 more element
Dependencies are inferred from the claim text.