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US 2013/0093098 A1Published application
Through substrate via structures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKu-Feng YANG, Tsang-Jiuh WU, Yi-Hsiu CHEN, Ebin LIAO, Yuan-Hung LIU, Wen-Chih CHIOU
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Abstract
The embodiments of forming a through substrate via (TSV) structure described enable reducing risk of damaging gate structures due to over polishing of an inter-level dielectric layer (ILD) layer. The TSV structure with a wider opening near one end also enables better gapfill.
Claims20
A structure comprising:
- a substrate;
- a through-substrate-via (TSV) extending into the substrate;
- and
- a metal layer formed over the substrate, wherein the metal layer is embedded in a dielectric layer, and wherein the dielectric layer lines the TSV.
1 more element
A structure comprising:
- a substrate;
- a through-substrate-via (TSV) extending into the substrate;
- and
- a metal layer formed over the substrate, wherein the metal layer is embedded in a dielectric layer, and wherein the dielectric layer lines the TSV, wherein the metal layer has a surface substantially at the same level with a surface of the TSV structure, wherein the TSV is wider at an end near the metal layer.
1 more element
A method of forming a structure, the method comprising:
- forming a through-substrate-via (TSV) opening in a substrate;
- depositing a dielectric layer on the substrate, wherein the dielectric layer lines the TSV opening,
- patterning and etching the dielectric layer to form an opening for a metal structure and a wider opening at one end of the TSV opening,
- filling the opening for the metal structure and the TSV openings with one conductive material;
- and
- removing excess conductive material from surfaces of the dielectric layer.
3 more elements
Dependencies are inferred from the claim text.