Electronic device and method for producing same
AssigneeFujitsu Limited
InventorsTsuyoshi Kanki, Hideki Kitada
Life of this patent
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Abstract
An electronic device includes: a first insulating film; an interconnection trench on a surface of the first insulating film; an interconnection pattern composed of Cu, the interconnection trench being filled with the interconnection pattern; a metal film on a surface of the interconnection pattern, the metal film having a higher elastic modulus than Cu; a second insulating film on the first insulating film; and a via plug composed of Cu and arranged in the second insulating film, the via plug being in contact with the metal film.
Claims10
An electronic device comprising:
- a first insulating film;
- an interconnection trench on a surface of the first insulating film;
- an interconnection pattern composed of Cu, the interconnection trench being filled with the interconnection pattern;
- a metal film on a surface of the interconnection pattern, the metal film having a higher elastic modulus than Cu;
- a second insulating film on the first insulating film;
- and
- a via plug composed of Cu and arranged in the second insulating film, the via plug being in contact with the metal film.
A method for producing an electronic device, comprising:
- forming an interconnection trench in a first insulating film;
- forming a Cu layer on the first insulating film, the interconnection trench being filled with the Cu layer;
- depositing a metal film on the Cu layer, the metal film having a higher elastic modulus than Cu;
- subjecting the Cu layer to chemical-mechanical polishing with the metal film serving as a stopper;
- forming a second insulating film on the first insulating film so as to cover the metal film;
- and
- forming a Cu via plug in the second insulating film so as to be in contact with the metal film.
A method for producing an electronic device, comprising:
- forming a resist film on a first insulating film, the resist film having a resist opening portion;
- forming a Cu interconnection pattern in the resist opening portion by a plating method with the resist film serving as a mask;
- forming a metal film on the resist film so as to cover the Cu interconnection pattern, the metal film having a higher elastic modulus than Cu;
- removing the resist film together with a portion of the metal film located on the resist film by a lift-off process;
- forming a second insulating film on the first insulating film so as to cover the Cu interconnection pattern and the metal film;
- and
- forming a Cu via plug in the second insulating film so as to be in contact with the metal film.
Dependencies are inferred from the claim text.