Semiconductor device, electrode member, and electrode member fabrication method

An electrode member comprising:

• a plurality of first holes made in one principal plane of an insulating support;
• first metal posts located in the plurality of first holes;
• a plurality of second holes made in another principal plane of the insulating support;
• and
• second metal posts which are located in the plurality of second holes and which are electrically insulated from the first metal posts.

A semiconductor device having a semiconductor element with an electrode on a surface, an electrode member being joined to the electrode, the electrode member including:

• a plurality of first holes made in one principal plane of an insulating support;
• first metal posts located in the plurality of first holes;
• a plurality of second holes made in another principal plane of the insulating support;
• and
• second metal posts which are located in the plurality of second holes and which are electrically insulated from the first metal posts.

A semiconductor device having a semiconductor element with an electrode on a surface, an electrode member being joined to the electrode, the electrode member including:

• a first electrode member including a first insulating support with a first plurality of perforations which pierce through principal planes and first metal posts located in the first plurality of perforations;
• a second electrode member including a second insulating support with a second plurality of perforations which pierce through principal planes and second metal posts located in the second plurality of perforations;
• and
• an insulating plate for electrically insulating the first metal posts in the first electrode member from the second metal posts In the second electrode member, and for integrally joining the first electrode member and the second electrode member.