Semiconductor Device and Method of Forming Air Gap Adjacent to Stress Sensitive Region of the Die

A method of making a semiconductor device, comprising:

• providing a first insulating layer;
• providing a first semiconductor die including a stress sensitive region;
• disposing the first semiconductor die over the first insulating layer with a gap between the stress sensitive region and first insulating layer;
• and
• depositing an encapsulant over the first semiconductor die and first insulating layer while blocking the encapsulant from contacting the stress sensitive region.

A semiconductor device, comprising:

• a first interconnect structure;
• a first semiconductor die including a stress sensitive region disposed over the first interconnect structure;
• a dam material disposed between the first semiconductor die and first interconnect structure around the stress sensitive region;
• and
• an encapsulant deposited over the first semiconductor die and first interconnect structure, wherein the dam material blocks the encapsulant from contacting the stress sensitive region.

A semiconductor device, comprising:

• a first insulating layer;
• a first semiconductor die including a stress sensitive region disposed over the first insulating layer with a gap between the stress sensitive region and first insulating layer;
• and
• an encapsulant deposited over the first semiconductor die and first insulating layer without contacting the stress sensitive region.