Wafer level applied rf shields

Abstract

An embodiment of a method of forming an on-chip RE shield on an integrated circuit chip in accordance with the present disclosure includes providing a wafer level integrated circuit component wafer having a front side and a back side before singulation; applying a resin metal layer on a back side of the wafer; and then separating the wafer into discrete RF shielded components. It is this resin metal layer on the back side that acts effectively as the RF shield, after singulation, i.e. separation of the wafer, into discrete RF shielded components.

Dependencies are inferred from the claim text.