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US 2013/0093062 A1Published application
Semiconductor structure and process thereof
OwnerYing-Chih Lin, Hsuan-Hsu Chen +2inventors
InventorsYing-Chih Lin, Hsuan-Hsu Chen, Jiunn-Hsiung Liao, Lung-En Kuo
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Abstract
A semiconductor structure includes a substrate, a recess and a material. The recess is located in the substrate, wherein the recess has an upper part and a lower part. The minimum width of the upper part is larger than the maximum width of the lower part. The material is located in the recess.
Claims26
A semiconductor structure, comprising:
- a substrate;
- a recess located in the substrate, wherein the recess has an upper part and a lower part, and the minimum width of the upper part is larger than the maximum width of the lower part;
- and
- a material located in the recess.
1 more element
A semiconductor process, comprising:
- providing a substrate;
- forming a recess in the substrate, wherein the recess has a first sidewall;
- filling a material in the recess and exposing a part of the recess;
- and
- performing an etching process to laterally etch the exposing part of the recess, therefore the recess comprises an upper part and a lower part, wherein the upper part has a second sidewall and the lower part has the first sidewall.
2 more elements
Dependencies are inferred from the claim text.