Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device comprising:

• forming underlying wiring on a semiconductor substrate;
• forming a resin film on the semiconductor substrate and the underlying wiring;
• forming a first opening in the resin film extending to the underlying wiring;
• forming a first SiN film on the underlying wiring and the resin film;
• forming a second opening in the first SiN film in the first opening;
• forming an upper layer wiring on the underlying wiring and the resin film;
• patterning the upper layer wiring and the first SiN film by anisotropic etching;
• forming a second SiN film on the patterned upper layer wiring and the resin film, wherein
• the upper layer wiring has a Ti film, connected to the underlying wiring via the first and second openings, and an Au film on the Ti film, and
• the first and second SiN films circumferentially protect the Ti film.