Method for producing silicon wafer and silicon wafer

A method for producing a silicon wafer, comprising at least:

• a first heat treatment process in which rapid heat treatment is performed on a silicon wafer cut from a silicon single crystal ingot grown by the Czochralski method by using a rapid heating/rapid cooling apparatus in a first atmosphere containing at least one of nitride film formation atmospheric gas, rare gas, and oxidizing gas at a first temperature that is higher than 1300° C. and is lower than or equal to a silicon melting point for 1 to 60 seconds;
• and
• a second heat treatment process in which, after the first heat treatment process, a temperature and an atmosphere are controlled so as to be a second temperature and a second atmosphere that suppress generation of a defect caused by a vacancy in the silicon wafer and rapid heat treatment is performed on the silicon wafer at the controlled second temperature in the controlled second atmosphere.