Semiconductor Device and Method of Manufacturing the Same
AssigneeDongbu HiTek Co., Ltd.
InventorDong Seok KIM
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Abstract
Provided is a semiconductor device. The semiconductor device includes a first insulation layer on a semiconductor substrate, the first insulation layer including a lower metal line, a second insulation layer on the first insulation layer, the second insulation layer including a metal head pattern, a thin film resistor pattern on the metal head pattern, a third insulation layer on the thin film resistor pattern, an upper metal line on the third insulation layer, a first via passing through the first, second, and third insulation layers to connect the lower metal line to the upper metal line, and a second via passing through the third insulation layer and the thin film resistor pattern to connect the metal head pattern to the upper metal line.
Claims20
A semiconductor device comprising:
- a first insulation layer on a semiconductor substrate, the first insulation layer comprising a lower metal line;
- a second insulation layer on the first insulation layer, the second insulation layer comprising a metal head pattern;
- a thin film resistor pattern on the metal head pattern;
- a third insulation layer on the thin film resistor pattern;
- a plurality of upper metal lines on the third insulation layer;
- a first via passing through the first, second, and third insulation layers to connect the lower metal line to a first one of the upper metal lines;
- and
- a second via passing through the third insulation layer and the thin film resistor pattern to connect the metal head pattern to a second one of the upper metal lines.
A method of manufacturing a semiconductor device, comprising:
- forming a first insulation layer comprising a lower metal line on a semiconductor substrate;
- forming a second insulation layer comprising a metal head pattern on the first insulation layer;
- forming a thin film resistor pattern on the metal head pattern;
- forming a third insulation layer on the thin film resistor pattern;
- forming a first via passing through the first, second, and third insulation layers and connected to the lower metal line, and simultaneously, forming a second via passing through the third insulation layer and the thin film resistor pattern and connected to the metal head pattern;
- and
- forming an upper metal line on the third insulation layer.
Dependencies are inferred from the claim text.