Semiconductor Device and Manufacturing Method of the Same
AssigneeDongbu HiTek Co., Ltd.
InventorChang Eun Lee
Life of this patent
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Abstract
Provided is a semiconductor device. The semiconductor device includes a first insulation layer on a semiconductor substrate, the first insulation layer including a lower metal line, a metal head pattern on the first insulation layer, the metal head pattern including an inclined side surface, a thin film resistor pattern on the metal head pattern, a second insulation layer on the metal head pattern and the thin film resistor pattern, an upper metal line on the second insulation layer, a first via connecting the lower metal line to the upper metal line, and a second via connecting the metal head pattern to the upper metal line.
Claims20
A semiconductor device, comprising:
- a first insulation layer on a semiconductor substrate, the first insulation layer comprising a lower metal line;
- a metal head pattern on the first insulation layer, the metal head pattern comprising an inclined side surface;
- a thin film resistor pattern on the metal head pattern;
- a second insulation layer on the metal head pattern and the thin film resistor pattern;
- an upper metal line on the second insulation layer;
- a first via connecting the lower metal line to the upper metal line;
- and
- a second via connecting the metal head pattern to the upper metal line.
A method of manufacturing a semiconductor device, comprising:
- forming a first insulation layer comprising a lower metal line on a semiconductor substrate;
- forming a metal head pattern comprising an inclined side surface on the first insulation layer;
- forming a thin film resistor pattern on top and side surfaces of the metal head pattern;
- forming a second insulation layer on the metal head pattern and the thin film resistor pattern;
- and
- simultaneously forming a first via passing through the first and second insulation layers and connected to the lower metal line and a second via passing through the second insulation layer and connected to the metal head pattern.
Dependencies are inferred from the claim text.