Deposited Material and Method of Formation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYao-Wen Chang, Cheng-Yuan Tsai, Hsing-Lien Lin
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Abstract
A system and method for manufacturing a semiconductor device is provided. An embodiment comprises forming a deposited layer using an atomic layer deposition (ALD) process. The ALD process may utilize a first precursor for a first time period, a first purge for a second time period longer than the first time period, a second precursor for a third time period longer than the first time period, and a second purge for a fourth time period longer than the third time period.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- introducing a first precursor to a deposition chamber for a first time;
- introducing a first purge gas to the deposition chamber for a second time after the introducing the first precursor, wherein the second time is larger than the first time;
- introducing a second precursor to the deposition chamber for a third time after the introducing the first purge gas, wherein the third time is larger than or equal to the first time;
- and
- introducing a second purge gas to the deposition chamber for a fourth time after the introducing the second precursor.
A method for manufacturing a semiconductor device, the method comprising:
- performing a first cycle to form a first monolayer of a dielectric material, the first cycle comprising:
- reacting a surface of a substrate with a first precursor for a first time period to form a first precursor surface;
- purging the first precursor from the first precursor surface for a second time period, wherein the second time period is greater than the first time period;
- oxidizing the first precursor surface with a second precursor to form the first monolayer of the dielectric material, the oxidizing the first precursor surface occurring for a third time period, wherein the third period is greater than or equal to the first time period;
- and
- purging the second precursor from the first monolayer of the dielectric material for a fourth time period, wherein the fourth time period is greater than the third time period;
- and
- performing a second cycle to form a second monolayer of the dielectric material after the performing the first cycle.
A semiconductor device comprising:
- a first layer comprising a first material, the first layer comprising a first plurality of monolayers, the first plurality of monolayers having a first density;
- and
- a second layer over the first layer, the second layer comprising the first material, the second layer comprising a second plurality of monolayers, the second plurality of monolayers having a second density less than the first density.
Dependencies are inferred from the claim text.