Vertically oriented semiconductor device and shielding structure thereof

A semiconductor device, comprising:

• a semiconductor substrate;
• and
• an interconnect structure formed over the substrate, the interconnect structure including:
• a capacitor having an anode component and a cathode component;
• and
• an inductor disposed approximate the capacitor and coupled with the capacitor,
• wherein the inductor includes a coil feature and a shielding structure surrounding the coil feature.

A method of fabricating a semiconductor device, comprising:

• providing a substrate;
• and
• forming an interconnect structure over the substrate, the interconnect structure having a plurality of conductive lines interconnected by a plurality of vias, wherein the forming the interconnect structure includes forming an inductor capacitor (LC) tank using a subset of the conductive lines and a subset of the vias, wherein:
• the LC tank includes a capacitor that is formed to have an anode component and a cathode component that is interdigitated with the anode component;
• and
• the LC tank includes an inductor having a coil feature and a shielding feature surrounding the coil feature, wherein both the coil feature and the shielding feature are wound around the capacitor.