Back to results
US 2013/0093042 A1Published application
TSV Formation Processes Using TSV-Last Approach
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJing-Chen Lin, Yung-Chi Lin, Ku-Feng Yang
Life of this patent
Estimating the term…
Abstract
A device includes a semiconductor substrate having a front surface and a back surface opposite the front surface. An insulation region extends from the front surface into the semiconductor substrate. An inter-layer dielectric (ILD) is over the insulation region. A landing pad extends from a top surface of the ILD into the insulation region. A through-substrate via (TSV) extends from the back surface of the semiconductor substrate to the landing pad.
Claims20
A circuit structure comprising:
- a semiconductor substrate;
- a shallow trench isolation (STI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate;
- a metal pad extending from a top surface of the STI region into the STI region, wherein the metal pad is encircled by the STI region;
- and
- a through-substrate via (TSV) extending from a back surface of the semiconductor substrate to contact the metal pad.
2 more elements
A circuit structure comprising:
- a semiconductor substrate;
- a metal pad extending from a top surface of the semiconductor substrate into the semiconductor substrate;
- and
- a through-substrate via (TSV) extending from a back surface of the semiconductor substrate to contact the metal pad, wherein the TSV has a tapered profile, and wherein a size of the TSV at a bottom surface of the semiconductor substrate is greater than a size of the TSV at an interface between the TSV and the metal pad.
1 more element
A circuit structure comprising:
- a semiconductor substrate;
- a shallow trench isolation (STI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate;
- a metal pad extending from a level higher than a top surface of the STI region into a center portion the STI region, with an outer portion of the STI region forming a ring encircling the metal pad;
- and
- a through-substrate via (TSV) extending from a back surface of the semiconductor substrate to contact a bottom surface of the metal pad.
2 more elements
Dependencies are inferred from the claim text.