US 2013/0093041 A1 · Semiconductor Device and Method for Manufacturing the Same

Abstract

The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention may comprise: a substrate; a device region located on the substrate; and at least one stress introduction region separated from the device region by an isolation structure, with stress introduced into at least a portion of the at least one stress introduction region, wherein the stress introduced into the at least a portion of the at least one stress introduction region is produced by utilizing laser to illuminate an amorphized portion comprised in the at least one stress introduction region to recrystallize the amorphized portion. The semiconductor device according to an embodiment of the invention produces stress in a simpler manner and thereby improves the performance of the device.

Claims24

Dependent claims

A method for manufacturing a semiconductor device, comprising:

providing a substrate;
forming a device region and forming at least one stress introduction region separated from the device region on the substrate;
forming an isolation structure between the device region and the at least one stress introduction region;
amorphizing at least a portion of the at least one stress introduction region;
and
recrystallizing the amorphized portion of the at least one stress introduction region by laser, thereby introducing stress into the at least one stress introduction region.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/578,598Filed 30 Nov 2011

Priority

CN 201110311343.614 Oct 2011

Published

18 Apr 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10W 10/014
Of isolation regions comprising dielectric materials: using trench refilling with dielectric materials, e.g. shallow trench isolations
H10D 30/791
Insulated-gate field-effect transistors [IGFET]: arrangements for exerting mechanical stress on the crystal lattice of the channel regions
H10D 30/796
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: having memorised stress for introducing strain in the…
H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Semiconductor Device and Method for Manufacturing the Same

Life of this patent

Semiconductor Device and Method for Manufacturing the Same

Life of this patent

Abstract

Claims24