Schottky Diode
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJam-Wem Lee, Yi-Feng Chang
Life of this patent
Estimating the term…
Abstract
An embodiment is a semiconductor structure. The semiconductor structure comprises a p-type region in a substrate; a first n-type well in the p-type region; a first p-type well in the p-type region; and a second p-type well in the first p-type well. A concentration of a p-type impurity in the first p-type well is less than a concentration of a p-type impurity in the second p-type well. Additional embodiments further comprise further n-type and p-type wells in the substrate. A method for forming a semiconductor structure is also disclosed.
Claims20
A semiconductor structure comprising:
- a p-type region in a substrate;
- a first n-type well in the p-type region;
- a first p-type well in the p-type region;
- and
- a second p-type well in the first p-type well, a concentration of a p-type impurity in the first p-type well being less than a concentration of a p-type impurity in the second p-type well.
A semiconductor structure comprising:
- an anode region in a substrate, the anode region comprising:
- a first p-type well in a p-type region, the p-type region being in the substrate;
- and
- a second p-type well in the first p-type well, a concentration of a p-type impurity in the second p-type well being greater than a concentration of a p-type impurity in the first p-type well;
- an anode contact on the substrate, the anode contact being electrically coupled to the second p-type well, the anode contact comprising a metal;
- a cathode region in the substrate, the cathode region comprising a first n-type well in the p-type region;
- and
- a cathode contact on the substrate, the cathode contact being electrically coupled to the first n-type well and the p-type region, the cathode contact comprising a metal.
A method for forming a semiconductor structure, the method comprising:
- forming a p-type region in a substrate;
- forming a first p-type well in the p-type region;
- forming a first n-type well in the p-type region;
- forming a second p-type well in the first p-type well, a concentration of a p-type impurity in the second p-type well being greater than a concentration of a p-type impurity in the first p-type well;
- and
- forming a first contact and a second contact on the substrate, the first contact being electrically coupled to the first n-type well and the p-type region, the second contact being electrically coupled to the second p-type well, each of the first contact and the second contact comprising a metal.
Dependencies are inferred from the claim text.